MOSFET 6R070C6

MOSFET 6R070C6

Category:

MOSFET 6R070C6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 391 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 53 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 170 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 215 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

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